a- mosx薄膜催化剂在硅光电阴极上光活化析氢机理的研究

O. Rubinkovskaya, V. Nevolin, D. Fominski, R. Romanov, P. Kartsev, V. Fominski, Hualin Jiang
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引用次数: 0

摘要

制备并研究了用于水分解光电化学过程中高效产氢的硅阴极。用脉冲激光从正磷酸溶液中掺杂磷,在p-Si硅片上获得了光活性层。在改性的n+p-Si晶片表面沉积了厚度达4 nm的非晶态硫化钼(A - mosx)薄膜。与裸n+p-Si相比,这引起了酸溶液中光电流的显著增加。在析氢的光电化学过程中对催化膜的组成进行了修饰。对a-MoSx异质结与n+-Si层界面处能带的研究表明,析氢反应的进行可能是由于电子穿隧穿过a-MoSx膜。利用密度泛函理论,对硅表面和a- mosx膜本身的化学变化对氢催化效率可能产生的影响进行了热力学分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of the mechanism of photoactivated hydrogen evolution on a silicon photocathode with a-MoSx thin-film catalyst
Silicon cathodes for the efficient production of hydrogen in the photoelectrochemical process of water splitting have been created and studied. A photoactive layer on p-Si wafer was obtained by pulsed laser doping of the wafer with phosphorus from a solution of orthophosphoric acid. A film of amorphous molybdenum sulfide (a-MoSx) up to 4 nm thick was deposited on the surface of the modified n+p-Si wafer. This caused a significant increase in photocurrents in the acid solution as compared to the bare n+p-Si. The composition of the catalytic film was modified during the photoelectrochemical process of hydrogen evolution. The study of the energy bands at the interface of the a-MoSx heterojunction with the n+-Si layer showed that the reaction of hydrogen evolution proceeded, probably, because of electron tunneling through the a-MoSx film. Using the density functional theory, a thermodynamic analysis of the possible effect of chemical changes on the silicon surface and in the a-MoSx film itself on the efficiency of hydrogen catalysis was carried out.
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