高均匀的InGaAlP/InGaP/GaAs结构

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147412

M. Mckee, R. Stall, B. Rose, J. Kim, J.H. Lee, D. Bang, J.R. Kim, Y.H. Inn, S.H. Lee, Y. Cho

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引用次数: 0

摘要

采用低压金属有机气相外延(MOVPE)技术，在垂直高速旋转圆盘反应器中生长出高质量的In/sub 0.5/Ga/sub 0.5/P和InGaAlP层。研究均匀性的三个最重要的领域是厚度、掺杂和波长。在直径5英寸的晶圆载体中心的单个直径50毫米的晶圆上，以及对称放置在直径5英寸载体上的三个直径50毫米的砷化镓晶圆上，都获得了高度均匀的薄膜。讨论了温度和V/III比对形貌和组成的影响。给出了InGaAlP/InGaP DH激光器的初步结果

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Highly uniform InGaAlP/InGaP/GaAs structures by low pressure MOVPE

High-quality In/sub 0.5/Ga/sub 0.5/P and InGaAlP layers have been grown by low-pressure metalorganic vapor-phase epitaxy (MOVPE) in a vertical, high-speed rotating-disk reactor. The three most important areas of uniformity investigated were thickness, doping, and wavelength. Highly uniform films were obtained both on a single 50-mm-diameter wafer at the center of a 5-in-diameter wafer carrier and on three 50-mm-diameter GaAs wafers symmetrically placed on a 5-in-diameter carrier. The effects of temperature and V/III ratio on morphology and composition are discussed. Initial results on InGaAlP/InGaP DH lasers are presented.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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