一种新的4mb非易失性铁电RAM电池电荷评价方案和测试方法

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820905

B. Jeon, Moon-Kyu Choi, Seung-Gyu Oh, Yeonbae Chung, K. Suh, Kinam Kim

{"title":"一种新的4mb非易失性铁电RAM电池电荷评价方案和测试方法","authors":"B. Jeon, Moon-Kyu Choi, Seung-Gyu Oh, Yeonbae Chung, K. Suh, Kinam Kim","doi":"10.1109/ICVC.1999.820905","DOIUrl":null,"url":null,"abstract":"This paper proposes a novel method to evaluate the real cell ferroelectric capacitor with 4 Mb nonvolatile ferroelectric RAM which has a Cell Charge Evaluation Scheme (CCES). The charge value and the distribution of the memory cell ferroelectric capacitor can be evaluated by the CCES. Additionally, it can easily screen out weak bits which have smaller charges than normal cells by using the CCES as a bit-line reference voltage generator.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"19 1","pages":"281-284"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A novel cell charge evaluation scheme and test method for 4 Mb nonvolatile ferroelectric RAM\",\"authors\":\"B. Jeon, Moon-Kyu Choi, Seung-Gyu Oh, Yeonbae Chung, K. Suh, Kinam Kim\",\"doi\":\"10.1109/ICVC.1999.820905\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a novel method to evaluate the real cell ferroelectric capacitor with 4 Mb nonvolatile ferroelectric RAM which has a Cell Charge Evaluation Scheme (CCES). The charge value and the distribution of the memory cell ferroelectric capacitor can be evaluated by the CCES. Additionally, it can easily screen out weak bits which have smaller charges than normal cells by using the CCES as a bit-line reference voltage generator.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"19 1\",\"pages\":\"281-284\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820905\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文提出了一种利用具有电池电荷评估方案(CCES)的4mb非易失性铁电RAM来评估真实电池铁电电容器的新方法。利用CCES可以评估存储电池铁电电容器的电荷值和电荷分布。此外，通过使用CCES作为位线参考电压发生器，它可以很容易地筛选出比正常电池具有更小电荷的弱位。

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A novel cell charge evaluation scheme and test method for 4 Mb nonvolatile ferroelectric RAM

This paper proposes a novel method to evaluate the real cell ferroelectric capacitor with 4 Mb nonvolatile ferroelectric RAM which has a Cell Charge Evaluation Scheme (CCES). The charge value and the distribution of the memory cell ferroelectric capacitor can be evaluated by the CCES. Additionally, it can easily screen out weak bits which have smaller charges than normal cells by using the CCES as a bit-line reference voltage generator.

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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