通道宽度相关的热载子衰减薄栅pmosfet

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843894

Y. Lee, K. Wu, T. Linton, N. Mielke, S. Hu, B. Wallace

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引用次数: 9

摘要

对于0.25 /spl mu/m的CMOS技术，已经观察到通道宽度相关的pMOSFET热载子退化。详细的表征揭示了窄宽度和宽宽度器件特有的两种不同的捕获机制。器件仿真表明，STI边缘和信道区域之间的电场差是信道宽度相关退化的原因。除了来自分立器件的数据外，还将提供产品老化数据，以支持依赖于通道宽度的pMOST退化机制。

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Channel-width dependent hot-carrier degradation of thin-gate pMOSFETs

Channel width dependent pMOSFET hot-carrier degradation has been observed for a 0.25 /spl mu/m CMOS technology. A detailed characterization revealed two distinct trapping mechanisms that are unique to both narrow and wide width devices. Device simulations indicate that the electric field difference between the STI edge and channel area is responsible for the channel-width dependent degradation. In addition to data from discrete devices, product burn-in data will also be presented to support the channel-width dependent pMOST degradation mechanism.

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来源期刊

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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