将ZnO薄膜与石英结合,实现SAW器件的大耦合系数和优异的温度系数

M. Kadota
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引用次数: 18

摘要

对于需要特定带宽的表面声波(SAW)器件的应用,需要良好的频率温度系数(TCF)和适当的机电耦合系数(k/sub /s /)。瑞利SAW器件的ST切割X传播石英衬底以其良好的TCF而闻名;然而,它的机电耦合系数在k/sub //sup 2/时仅为0.0014,因此通常不适合需要特定带宽的SAW器件的应用。一般来说,大多数单晶和薄膜具有负的TCF。只有少数材料,如石英衬底具有特定的切割角度或传播方向和SiO/sub 2/薄膜具有正TCF。许多旨在通过在具有负TCF的衬底上沉积具有正TCF的SiO/ sub2 /薄膜来改善TCF的研究已被报道。然而,由于这种衬底的TCF绝对值较大,因此需要一层相对较厚的SiO/sub 2/薄膜来补偿其TCF。作者从理论上和实验上详细研究了相反的组合,即具有负TCF的ZnO薄膜与具有适当正TCF的石英衬底的组合,并选择合适的衬底切割角和传播角。结果表明,作者首次利用ST-cut 35/spl度/X传播石英衬底(29/spl度/45' Y旋转和42/spl度/45' Y旋转35/spl度/X传播石英)实现了具有适当机电耦合系数(k/sub /s /sup /=0.011)、良好TCF (/spl ap/Oppm//spl度/C)和IDT/ZnO/短平面/石英结构中的零功率流角的SAW衬底。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Combination of ZnO film and quartz to realize large coupling factor and excellent temperature coefficient for SAW devices
A good temperature coefficient of frequency (TCF) and an appropriate electromechanical coupling factor (k/sub s/) are required for applications of surface acoustic wave (SAW) devices requiring a specific bandwidth. An ST cut X propagation quartz substrate for Rayleigh SAW devices is known for its good TCF; however, its electromechanical coupling factor is as small as 0.0014 at k/sub s//sup 2/, so it is often unsuitable for applications of SAW devices requiring a specific bandwidth. Generally, most single crystals and thin films have a negative TCF. Only a few materials such as a quartz substrate having a specific cutting angle or a propagating direction and SiO/sub 2/ films have a positive TCF. Many investigations aimed at improving the TCF by depositing a SiO/sub 2/ film having a positive TCF on a substrate having a negative TCF have been reported on. However, since the absolute value of the TCF of such substrates is large, a relatively thick film of SiO/sub 2/ is required for compensation of its TCF. The author has theoretically and experimentally studied in detail the opposite combination, that is, the combination of a ZnO film having a negative TCF and a quartz substrate having an appropriate positive TCF, with selection of appropriate cutting and propagation angles of the substrate. As the result, the author could realize SAW substrates having an appropriate electromechanical coupling factor (k/sub s//sup 2/=0.011), a good TCF (/spl ap/Oppm//spl deg/C), and a zero power flow angle in structures of IDT/ZnO/quartz and IDT/ZnO/shorted-plane/quartz using an ST-cut 35/spl deg/X propagation quartz substrates (a 29/spl deg/45' rotated Y and a 42/spl deg/45' rotated Y plates 35/spl deg/X propagation quartz) for the first time.
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