双图案技术的最优布局分解

Xiaoping Tang, Minsik Cho
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引用次数: 48

摘要

双图案技术(DPT)被认为是亚22nm光刻技术中最实用的解决方案。DPT将单个布局分解为两个蒙版,并应用双重曝光来打印布局中的形状。DPT需要精确的覆盖控制。因此,DPT分解的主要目标是最小化两个蒙版中形状之间的缝线(覆盖)数量。在DPT分解中最小化缝线数的问题被认为是np困难问题。现有的方法要么采用整数线性规划(ILP),要么使用启发式方法。在本文中,我们证明了这个问题实际上是在P中,并提出了一种分解DPT布局的方法,并最优地减少了针数。该方法的复杂度为O(n1.5 log n),实验结果表明,该方法比快速启发式方法更快。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimal layout decomposition for double patterning technology
Double patterning technology (DPT) is regarded as the most practical solution for the sub-22nm lithography technology. DPT decomposes a single layout into two masks and applies double exposure to print the shapes in the layout. DPT requires accurate overlay control. Thus, the primary objective in DPT decomposition is to minimize the number of stitches (overlay) between the shapes in the two masks. The problem of minimizing the number of stitches in DPT decomposition is conjectured to be NP-hard. Existing approaches either apply Integer Linear Programming (ILP) or use heuristics. In this paper, we show that the problem is actually in P and present a method to decompose a layout for DPT and minimize the number of stitches optimally. The complexity of the method is O(n1.5 log n). Experimental results show that the method is even faster than the fast heuristics.
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