基于非易失性存储器的模拟倍增电路打破POps/J势垒

M. Mahmoodi, D. Strukov
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引用次数: 6

摘要

与数字乘法器相比,中低分辨率模拟向量乘法器(vmm)具有显著的能量/面积效率。尽管如此,模拟vmm所能达到的最大性能常常受到外围电路开销的限制。本文的主要贡献是设计了新的传感电路,提高了模拟乘法器的能量效率和密度。该电路是基于线性吉尔伯特单元,由一个浮动非线性电阻和一个低增益放大器拓扑组合而成。采用了几种补偿技术来确保与工艺、温度和电源电压变化有关的可靠性。作为案例研究,我们考虑用嵌入式分闸NOR快闪记忆体实现双门电流模VMM。仿真结果表明,采用55 nm CMOS技术设计的4位100x100 VMM电路达到了创纪录的3.63 POps/J的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Breaking POps/J Barrier with Analog Multiplier Circuits Based on Nonvolatile Memories
Low-to-medium resolution analog vector-by-matrix multipliers (VMMs) offer a remarkable energy/area efficiency as compared to their digital counterparts. Still, the maximum attainable performance in analog VMMs is often bounded by the overhead of the peripheral circuits. The main contribution of this paper is the design of novel sensing circuitry which improves energy-efficiency and density of analog multipliers. The proposed circuit is based on translinear Gilbert cell, which is topologically combined with a floating nonlinear resistor and a low-gain amplifier. Several compensation techniques are employed to ensure reliability with respect to process, temperature, and supply voltage variations. As a case study, we consider implementation of couple-gate current-mode VMM with embedded split-gate NOR flash memory. Our simulation results show that a 4-bit 100x100 VMM circuit designed in 55 nm CMOS technology achieves the record-breaking performance of 3.63 POps/J.
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