复合压电单晶硅MEMS谐振器的品质因子优化

2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-05-17 DOI:10.1109/MWSYM.2015.7166968

Ossama Mortada, P. Blondy, J. Orlianges, M. Chatras, A. Crunteanu

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引用次数: 8

摘要

本文报道了压电式MEMS谐振器的设计、仿真、制作和测试结果。结果表明，当ZnO厚度从800 nm减小到200 nm时，在700 MHz附近的质量因子分别从430增加到1600。实验数据与理论计算符合得很好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Quality factor optimization of composite piezoelectric single-crystal silicon MEMS resonators

This paper reports the design, simulation, fabrication and test results of piezoelectric MEMS resonators. We demonstrate that the reduction of the ZnO thickness from 800 nm to 200 nm increases the quality factor from 430 to 1600 respectively around 700 MHz. Experimental data are in very good agreement with theoretical computations.

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2015 IEEE MTT-S International Microwave Symposium

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