Resistive switching of Ag/In2O3/Pt heterostructures for non volatile memory applications

Resistance switching properties of nanostructured In2O3 films grown on Pt bottom electrode have been investigated for non volatile memory applications. Ag/In2O3/Pt/Ti/SiO2/Si heterostructures were fabricated by pulsed laser deposition and e-beam evaporation techniques. Polycrystalline growth of oxides In2O3 was confirmed by grazing incidence X-ray diffraction, where as AFM show nanostructured growth with smooth surface morphology. Two terminal I-V characteristics showed reproducible hysteresis with a sharp resistive switching, suggesting two distinct resistance states in the film and bipolar type switching. Typical resistance switching ratio (Ron/Roff) of the order of 72% has been estimated at room temperature. The mechanism of the observed resistance switching is analyzed by space charge limited current (SCLS) and the Schottky-like barrier formation at Ag/In2O3 interface in the off states, where as, Pool-Frankel type conduction mechanism seems valid in the on state.