分析氧化陷阱引起的陷阱电流，以提高闪存的保留

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843915

R. Yamada, Y. Mori, Y. Okuyama, J. Yugami, T. Nishimoto, H. Kume

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引用次数: 60

摘要

为了提高闪存保持特性，我们研究了金属氧化物半导体结构(MOS电容器和mosfet)中氧化陷阱引起的陷阱电流。我们表明，由于陷阱电流在快闪存储器中的阈值电压漂移可以达到0.6 V，持续1年。这个值对闪存保留是有害的。其次，我们分析了陷阱电流的两种传导机制，即从较深的陷阱直接隧穿到阳极和从较浅的陷阱热激发电子隧穿到氧化物导带。深层圈闭由Fowler-Nordheim应力作用下的电子注入产生，浅层圈闭由空穴注入产生。

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Analysis of detrap current due to oxide traps to improve flash memory retention

To improve flash memory retention characteristics, we study detrap current due to oxide traps in metal-oxide-semiconductor structures (MOS capacitors and MOSFETs). We show that threshold voltage shift due to detrap current in flash memories can reach 0.6 V for 1 year. This value is detrimental for flash memory retention. Next, we analyze the two types of conduction mechanism of the detrap current, which are direct tunneling to the anode from deeper traps and thermally excited electron tunneling to the oxide conduction band from shallower traps. The deeper traps are generated by electron injection during Fowler-Nordheim stressing, while the shallower traps are generated by hole injection.

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2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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