用于32nm zEnterprise™EC12处理器的7GHz L1缓存sram

John Davis, Paul Bunce, Diana M. Henderson, Y. Chan, U. Srinivasan, D. Rodko, P. Patel, T. Knips, T. Werner
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引用次数: 7

摘要

5.5 GHz 32nm zEnterprise™EC12处理器的L1高速缓存需要SRAM设计,可以积极使用动态电路。随着技术的发展和晶体管数量的增长,随机器件可变性[1]和功率限制已成为重大挑战。特别是,随机器件变异性引起的脉冲收缩和动态信号的错位必须仔细处理。本文介绍了一系列新的设计方法,使L1高速缓存SRAM能够在7GHz下运行,包括3级位线层次结构、减少动态路径长度、本地化读取支持以及可部分关闭选择列的省电机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
7GHz L1 cache SRAMs for the 32nm zEnterprise™ EC12 processor
The L1 cache for the 5.5 GHz 32nm zEnterprise™ EC12 processor requires SRAM designs that make aggressive use of dynamic circuitry. As technology has scaled and transistor counts have grown, random device variability [1] and power limitations have become significant challenges. In particular, random device-variability-induced pulse shrinkage and misalignment in dynamic signals must be carefully addressed. Described here are a series of new design approaches enabling L1 cache SRAM operation at 7GHz, including a 3-level bitline hierarchy, decreased dynamic path lengths, localized read enables, and a power-savings mechanism in which selective columns can be partially powered down.
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