J. Moody, Anjana Dissanayake, Henry L. Bishop, Ruochen Lu, Ningxi Liu, Divya Duvvuri, A. Gao, D. Truesdell, N. S. Barker, S. Gong, B. Calhoun, S. Bowers
{"title":"-106dBm 33nW位级占空比调谐射频唤醒接收机","authors":"J. Moody, Anjana Dissanayake, Henry L. Bishop, Ruochen Lu, Ningxi Liu, Divya Duvvuri, A. Gao, D. Truesdell, N. S. Barker, S. Gong, B. Calhoun, S. Bowers","doi":"10.23919/VLSIC.2019.8777956","DOIUrl":null,"url":null,"abstract":"This work presents a 33 nW wake-up receiver with -106 dBm sensitivity at 428 MHz. Within-bit duty cycling allows RF gain at nano-watt DC power levels providing 26 dB sensitivity improvement over prior art at iso-power. An RF MEMS filter and an automatic gain and offset control loop suppress noise and reject interference. The receiver can be digitally tuned across DC power, latency, and sensitivity to provide flexible functionality from indoor short range to outdoor long-range applications.","PeriodicalId":6707,"journal":{"name":"2019 Symposium on VLSI Circuits","volume":"2 1","pages":"C86-C87"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A -106dBm 33nW Bit-Level Duty-Cycled Tuned RF Wake-up Receiver\",\"authors\":\"J. Moody, Anjana Dissanayake, Henry L. Bishop, Ruochen Lu, Ningxi Liu, Divya Duvvuri, A. Gao, D. Truesdell, N. S. Barker, S. Gong, B. Calhoun, S. Bowers\",\"doi\":\"10.23919/VLSIC.2019.8777956\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a 33 nW wake-up receiver with -106 dBm sensitivity at 428 MHz. Within-bit duty cycling allows RF gain at nano-watt DC power levels providing 26 dB sensitivity improvement over prior art at iso-power. An RF MEMS filter and an automatic gain and offset control loop suppress noise and reject interference. The receiver can be digitally tuned across DC power, latency, and sensitivity to provide flexible functionality from indoor short range to outdoor long-range applications.\",\"PeriodicalId\":6707,\"journal\":{\"name\":\"2019 Symposium on VLSI Circuits\",\"volume\":\"2 1\",\"pages\":\"C86-C87\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIC.2019.8777956\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2019.8777956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A -106dBm 33nW Bit-Level Duty-Cycled Tuned RF Wake-up Receiver
This work presents a 33 nW wake-up receiver with -106 dBm sensitivity at 428 MHz. Within-bit duty cycling allows RF gain at nano-watt DC power levels providing 26 dB sensitivity improvement over prior art at iso-power. An RF MEMS filter and an automatic gain and offset control loop suppress noise and reject interference. The receiver can be digitally tuned across DC power, latency, and sensitivity to provide flexible functionality from indoor short range to outdoor long-range applications.