利用摩尔效应改进半导体制造的覆盖层

2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI:10.1109/ASMC49169.2020.9185396

Y. Hagio, K. Kasa, Sho Kawadahara, Manabu Takakuwa, Yosuke Takahata, Katsuya Kato, A. Nakae

{"title":"利用摩尔效应改进半导体制造的覆盖层","authors":"Y. Hagio, K. Kasa, Sho Kawadahara, Manabu Takakuwa, Yosuke Takahata, Katsuya Kato, A. Nakae","doi":"10.1109/ASMC49169.2020.9185396","DOIUrl":null,"url":null,"abstract":"In this paper, we demonstrate methodology of mark design for semiconductor device based on simulations, measurements and verification. We compared overlay performance of conventional overlay targets, as well as grating-over-grating imaging targets utilizing Moiré effect. Moiré target showed better accuracy, process robustness and precision with improved measurement technology.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"91 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Overlay improvement for semiconductor manufacturing using Moiré effect\",\"authors\":\"Y. Hagio, K. Kasa, Sho Kawadahara, Manabu Takakuwa, Yosuke Takahata, Katsuya Kato, A. Nakae\",\"doi\":\"10.1109/ASMC49169.2020.9185396\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we demonstrate methodology of mark design for semiconductor device based on simulations, measurements and verification. We compared overlay performance of conventional overlay targets, as well as grating-over-grating imaging targets utilizing Moiré effect. Moiré target showed better accuracy, process robustness and precision with improved measurement technology.\",\"PeriodicalId\":6771,\"journal\":{\"name\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"91 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC49169.2020.9185396\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185396","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在本文中，我们展示了基于仿真、测量和验证的半导体器件标记设计方法。比较了传统叠加目标和利用莫尔效应的光栅-过光栅成像目标的叠加性能。通过改进的测量技术，提高了目标的精度、过程鲁棒性和精密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Overlay improvement for semiconductor manufacturing using Moiré effect

In this paper, we demonstrate methodology of mark design for semiconductor device based on simulations, measurements and verification. We compared overlay performance of conventional overlay targets, as well as grating-over-grating imaging targets utilizing Moiré effect. Moiré target showed better accuracy, process robustness and precision with improved measurement technology.

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2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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