显示磁偶极跃迁的荧光纳米结构的确定性制造

Marijn Rikers, Ayesheh Bashiri, Angela Barreda Gomez, M. Steinert, Duk-Yong Choi, T. Pertsch, I. Staude
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引用次数: 0

摘要

制造工艺如图1A所示,包括将电子束抗蚀剂(ma-N2401)与0.1质量百分比的荧光铕配合物(Eu(TTFA)3)的混合物自旋涂覆,最终厚度为80 nm。然后用电子束光刻曝光显影。至关重要的是,这一过程可以精确控制所产生的荧光结构的形状和大小,分辨率接近。100nm。Eu(TTFA)3是一种金属-有机配合物,具有完善的发射过程。具体来说,TTFA配体吸收紫外光$(\lambda=375\ \text{nm})$,通过能量转移,中心$\text{Eu}^{3+}$离子${}^{\text{5}}\text{Do}$流形被填充,光子在到${}^{7}\mathrm{F}_{\mathrm{j}}\ \{\mathrm{j}=0$的衰变跃迁中发射,1、2、3、4、5、6 $\}. {}^{5}\mathrm{D}_{0}\rightarrow {}^{7}\mathrm{F}_{1}$和${}^{5}\mathrm{D}_{0}\rightarrow {}^{7}\mathrm{F}_{2}$分别是磁偶极子和电偶极子跃迁[3]。这种转变在制造过程之后仍然存在,剂量在100 $\mu \mathrm{C}\cdot \text{cm}^{-2}$和500 $\mu \mathrm{C} \cdot \text{cm}^{-2}$之间,如图1B所示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deterministic Fabrication of Fluorescent Nanostructures Exhibiting Magnetic dipolar Transitions
The fabrication process, as shown in schematic Fig. 1A, includes spin-coating of a mixture of electron beam resist (ma-N2401) with 0.1 mass percentage of the fluorescent europium complex (Eu(TTFA)3) with a final thickness of ~80 nm. Then the film is exposed using electron beam lithography and developed. Crucially, this process gives precise control over the shape and size of the resulting fluorescent structures with a resolution of approx. 100 nm. Eu(TTFA)3 is a metal-organic coordination complex that has a well-established emission process. Specifically, the TTFA ligands absorb UV light $(\lambda=375\ \text{nm})$ and through energy transfer the central $\text{Eu}^{3+}$ ions ${}^{\text{5}}\text{Do}$ manifold is populated and photons are emitted in a decay transition to ${}^{7}\mathrm{F}_{\mathrm{j}}\ \{\mathrm{j}=0$, 1, 2,3,4,5,6 $\}. {}^{5}\mathrm{D}_{0}\rightarrow {}^{7}\mathrm{F}_{1}$ and ${}^{5}\mathrm{D}_{0}\rightarrow {}^{7}\mathrm{F}_{2}$ are magnetic dipole and electric dipole transitions, respectively [3]. This transition remains present after the fabrication process, for doses between 100 $\mu \mathrm{C}\cdot \text{cm}^{-2}$ and 500 $\mu \mathrm{C} \cdot \text{cm}^{-2}$, as shown in Fig. 1B.
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