用于热电子能量转换的TiN/GaN金属/半导体多层材料

V. Rawat, T. Sands
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引用次数: 0

摘要

利用反应脉冲激光在氨环境中沉积TiN-GaN多层膜作为固态热离子直接能量转换器件。利用高分辨率x射线衍射和横截面透射电镜对多层膜进行晶体学分析表明,尽管TiN和GaN的晶体结构不同,但仍有可能生长出厚的单轴织构柱状晶粒多层膜。利用霍尔效应和塞贝克系数测量评估平面内电子输运。热导率测量表明,通过增加界面密度,多层膜的平面热导率可以降低到3.6 W/m-K,相比之下,大块GaN为135 W/mK,大块TiN为38 W/mK。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
TiN/GaN Metal/Semiconductor Multilayers for Thermionic Energy Conversion
TiN-GaN multilayers were grown for potential application as solid-state thermionic direct energy conversion devices using reactive pulsed laser deposition in an ammonia ambient. The crystallographic analysis of the multilayers by high-resolution x-ray diffraction and crosssectional TEM revealed that, despite the difference in crystal structures of TiN and GaN, it was possible to grow thick uniaxially textured columnar-grained multilayers. Inplane electronic transport was assessed using Hall effect and Seebeck coefficient measurements. Thermal conductivity measurements have shown that by increasing the interface density, the cross-plane thermal conductivity of the multilayers can be reduced to 3.6 W/m-K, compared to 135 W/mK for bulk GaN and 38 W/mK for bulk TiN.
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