{"title":"用于热电子能量转换的TiN/GaN金属/半导体多层材料","authors":"V. Rawat, T. Sands","doi":"10.1201/9780429187469-17","DOIUrl":null,"url":null,"abstract":"TiN-GaN multilayers were grown for potential application as solid-state thermionic direct energy conversion devices using reactive pulsed laser deposition in an ammonia ambient. The crystallographic analysis of the multilayers by high-resolution x-ray diffraction and crosssectional TEM revealed that, despite the difference in crystal structures of TiN and GaN, it was possible to grow thick uniaxially textured columnar-grained multilayers. Inplane electronic transport was assessed using Hall effect and Seebeck coefficient measurements. Thermal conductivity measurements have shown that by increasing the interface density, the cross-plane thermal conductivity of the multilayers can be reduced to 3.6 W/m-K, compared to 135 W/mK for bulk GaN and 38 W/mK for bulk TiN.","PeriodicalId":6429,"journal":{"name":"2007 Cleantech Conference and Trade Show Cleantech 2007","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"TiN/GaN Metal/Semiconductor Multilayers for Thermionic Energy Conversion\",\"authors\":\"V. Rawat, T. Sands\",\"doi\":\"10.1201/9780429187469-17\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"TiN-GaN multilayers were grown for potential application as solid-state thermionic direct energy conversion devices using reactive pulsed laser deposition in an ammonia ambient. The crystallographic analysis of the multilayers by high-resolution x-ray diffraction and crosssectional TEM revealed that, despite the difference in crystal structures of TiN and GaN, it was possible to grow thick uniaxially textured columnar-grained multilayers. Inplane electronic transport was assessed using Hall effect and Seebeck coefficient measurements. Thermal conductivity measurements have shown that by increasing the interface density, the cross-plane thermal conductivity of the multilayers can be reduced to 3.6 W/m-K, compared to 135 W/mK for bulk GaN and 38 W/mK for bulk TiN.\",\"PeriodicalId\":6429,\"journal\":{\"name\":\"2007 Cleantech Conference and Trade Show Cleantech 2007\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Cleantech Conference and Trade Show Cleantech 2007\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1201/9780429187469-17\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Cleantech Conference and Trade Show Cleantech 2007","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1201/9780429187469-17","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
TiN/GaN Metal/Semiconductor Multilayers for Thermionic Energy Conversion
TiN-GaN multilayers were grown for potential application as solid-state thermionic direct energy conversion devices using reactive pulsed laser deposition in an ammonia ambient. The crystallographic analysis of the multilayers by high-resolution x-ray diffraction and crosssectional TEM revealed that, despite the difference in crystal structures of TiN and GaN, it was possible to grow thick uniaxially textured columnar-grained multilayers. Inplane electronic transport was assessed using Hall effect and Seebeck coefficient measurements. Thermal conductivity measurements have shown that by increasing the interface density, the cross-plane thermal conductivity of the multilayers can be reduced to 3.6 W/m-K, compared to 135 W/mK for bulk GaN and 38 W/mK for bulk TiN.