An F-Band Reflection Amplifier using 28 nm CMOS FD-SOI Technology for Active Reflectarrays and Spatial Power Combining Applications

A new topology of a reflection amplifier is proposed and demonstrated using a CMOS FD-SOI 28 nm process for high gain reflectarray antenna applications. The design is based on two sets of cross coupled pairs which are coupled inductively. An internal oscillations-block was implemented in order to improve the stability of the amplifier. Variable stable gain of 5-25 dB at the bandwidth of 106-127 GHz was achieved, with output power of up to 0 dBm (measurement limited). The total power consumption was 6-20 mW, depending on the exact bias configuration. The reflection amplifier results with a 3-dB bandwidth of up to 18%. The design consumes a core area of only 90×80 μm2 and allows the implementation of high efficiency active reflectarray antennas.