{"title":"氮化镓的原生衬底:图变厚","authors":"Keith Gurnett, Tom Adams","doi":"10.1016/S0961-1290(06)71942-1","DOIUrl":null,"url":null,"abstract":"<div><p>Gallium nitride (GaN) is often regarded more or less as the younger brother of gallium arsenide (GaAs), and to some extent this is an accurate view. Lately, GaN has been receiving a great deal of attention, for the most part because its strong points - handling high frequencies, high power levels and higher operational linearity - are required by technologies that are now, or will soon become, significant economically.</p></div>","PeriodicalId":100654,"journal":{"name":"III-Vs Review","volume":"19 9","pages":"Pages 39-41"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0961-1290(06)71942-1","citationCount":"15","resultStr":"{\"title\":\"Native substrates for GaN: the plot thickens\",\"authors\":\"Keith Gurnett, Tom Adams\",\"doi\":\"10.1016/S0961-1290(06)71942-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Gallium nitride (GaN) is often regarded more or less as the younger brother of gallium arsenide (GaAs), and to some extent this is an accurate view. Lately, GaN has been receiving a great deal of attention, for the most part because its strong points - handling high frequencies, high power levels and higher operational linearity - are required by technologies that are now, or will soon become, significant economically.</p></div>\",\"PeriodicalId\":100654,\"journal\":{\"name\":\"III-Vs Review\",\"volume\":\"19 9\",\"pages\":\"Pages 39-41\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/S0961-1290(06)71942-1\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"III-Vs Review\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0961129006719421\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"III-Vs Review","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0961129006719421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gallium nitride (GaN) is often regarded more or less as the younger brother of gallium arsenide (GaAs), and to some extent this is an accurate view. Lately, GaN has been receiving a great deal of attention, for the most part because its strong points - handling high frequencies, high power levels and higher operational linearity - are required by technologies that are now, or will soon become, significant economically.
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