阳极孔注入与氢释放:栅氧化物击穿的机理

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-01-01 DOI:10.1109/RELPHY.2000.843887

J. Wu, E. Rosenbaum, B. MacDonald, E. Li, J. Tao, B. Tracy, P. Fang

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引用次数: 33

摘要

最近的研究表明，在氘中进行金属化后退火可以将晶体管的寿命提高一个数量级或更多。在本文中，我们证明了在氘中退火的器件的栅氧化可靠性与在氢中退火的器件相似。这一发现表明，涉及界面氢释放的栅极氧化物击穿模型可能不准确。

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Anode hole injection versus hydrogen release: the mechanism for gate oxide breakdown

Recent studies have shown that post-metallization anneal in deuterium can improve transistor lifetime by one order of magnitude or more. In this paper, we show that the gate oxide reliability of devices annealed in deuterium is similar to that of devices annealed in hydrogen. This finding suggests that a model for gate oxide breakdown which involves release of interfacial hydrogen may not be accurate.

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2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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