PZT铁电薄膜的结构相变

Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1994-08-07 DOI:10.1109/ISAF.1994.522413

L. A. Sapozhnikov, I. Sem, I. Zakharchenko, E. Sviridov, V. Alyoshin, V. Dudkevich

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引用次数: 0

摘要

采用红外溅射法制备了Pb(Zr,Ti,W,Cd)O/sub 3/ (PZT)薄膜。外延薄膜在室温下具有四边形的晶胞。单晶胞参数随温度变化曲线显示了块状材料相变温度特征的扭结。多晶薄膜具有伪晶胞。尽管存在一整套铁电性质，但在相变过程中，没有观察到单元胞参数的温度依赖性异常。结构相变到立方相存在的唯一证据是x射线反射强度的本质下降，在外延薄膜中指数为奇和。在接近居里点温度时，这些反射强度对Zr和Ti离子相对于Pb的位移最为敏感。

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The structural phase transition in PZT ferroelectric films

The Pb(Zr,Ti,W,Cd)O/sub 3/ (PZT) films were deposited by rf-sputtering of stoichiometric targets in an oxygen atmosphere. Epitaxial films had a tetragonal unit cell at room temperature. The unit cell parameter vs temperature curve showed a kink at phase transition temperature characteristic of the bulk material. Polycrystalline films had a pseudocubic unit cell. In spite of the presence of a full set of ferroelectric properties no anomalies in the temperature dependence of the unit cell parameter at phase transition were observed. The only evidence of the presence of the structural phase transition to a cubic phase was the essential decrease of intensity of X-ray reflections with an odd sum of indices as in the epitaxial films. These reflection intensities are most sensitive to the displacement of Zr and Ti cations with respect to Pb on approaching the Curie point temperature.

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Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics

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