{"title":"一个v波段波导到微带内嵌过渡","authors":"Kyu Y. Han, C. Pao","doi":"10.1109/MWSYM.2012.6259752","DOIUrl":null,"url":null,"abstract":"A wideband, low loss inline transition from microstrip line to rectangular waveguide is presented. This transition efficiently couples energy from a microstrip line to a ridge and subsequently to a TE10 waveguide. This unique structure requires no mechanical pressure for electrical contact between the microstrip probe and the ridge because the main planar circuitry and ridge sections are placed on a single housing. The measured insertion loss for back-to-back transition is 0.5 – 0.7 dB (0.25 – 0.35 dB/transition) in the band 50 – 72 GHz.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A V-band waveguide to microstrip inline transition\",\"authors\":\"Kyu Y. Han, C. Pao\",\"doi\":\"10.1109/MWSYM.2012.6259752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wideband, low loss inline transition from microstrip line to rectangular waveguide is presented. This transition efficiently couples energy from a microstrip line to a ridge and subsequently to a TE10 waveguide. This unique structure requires no mechanical pressure for electrical contact between the microstrip probe and the ridge because the main planar circuitry and ridge sections are placed on a single housing. The measured insertion loss for back-to-back transition is 0.5 – 0.7 dB (0.25 – 0.35 dB/transition) in the band 50 – 72 GHz.\",\"PeriodicalId\":6385,\"journal\":{\"name\":\"2012 IEEE/MTT-S International Microwave Symposium Digest\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE/MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2012.6259752\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE/MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2012.6259752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A V-band waveguide to microstrip inline transition
A wideband, low loss inline transition from microstrip line to rectangular waveguide is presented. This transition efficiently couples energy from a microstrip line to a ridge and subsequently to a TE10 waveguide. This unique structure requires no mechanical pressure for electrical contact between the microstrip probe and the ridge because the main planar circuitry and ridge sections are placed on a single housing. The measured insertion loss for back-to-back transition is 0.5 – 0.7 dB (0.25 – 0.35 dB/transition) in the band 50 – 72 GHz.