基于间隙减小的AlN电容压电谐振器频率调谐

R. Schneider, T. Naing, T. Rocheleau, C. Nguyen
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引用次数: 5

摘要

一种电压控制的谐振频率调谐机制,能够影响1500 ppm或更高的频率位移,首次在AlN电容-压电谐振器上进行了演示。这里的关键促成因素是一个兼容的顶部电极悬架,它可以随着施加的电压移动,从而有效地随器件串联改变电容,从而改变其串联谐振频率。电容压电AlN微机械谐振器,即那些电极不直接附着在压电材料上的谐振器,与附着电极相比,已经表现出高q因子,例如,在300 MHz时,8800比2100;开/关可切换;,如本文所示,可以表现为1.0%的机电耦合Cx=C0。这种无需外部元件即可调谐频率的新能力现在邀请使用片上校正方案来提高精度或减少温度引起的频率漂移,这使得将该技术用于频率控制应用的情况更加引人注目。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gap reduction based frequency tuning for AlN capacitive-piezoelectric resonators
A voltage controlled resonance frequency tuning mechanism, capable of effecting 1,500 ppm frequency shifts or more, is demonstrated for the first time on an AlN capacitive-piezoelectric resonator. The key enabler here is a compliant top electrode suspension that moves with applied voltage to effectively vary capacitance in series with the device, hence changing its series resonance frequency. Capacitive-piezoelectric AlN micromechanical resonators, i.e., those with electrodes not directly attached to the piezoelectric material, already exhibit high Q-factors compared to attached-electrode counterparts, e.g., 8,800 versus 2,100 at 300 MHz; are on/off switchable; and, as shown in this work, can exhibit electromechanical coupling Cx=C0 of 1.0%. This new ability to tune frequency without the need for external components now invites the use of on-chip corrective schemes to improve accuracy or reduce temperature-induced frequency drift, making an even more compelling case to employ this technology for frequency control applications.
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