185mW InP HBT功率放大器，1倍频带宽(2550GHz)， 44GHz时峰值PAE为38%，芯片面积为276 x 672 μm2

2019 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2019-06-02 DOI:10.1109/mwsym.2019.8701079

A. Arias, P. Rowell, M. Urteaga, Z. Griffith, K. Shinohara, J. Bergman, A. Carter, R. Pierson, B. Brar, J. Buckwalter, M. Rodwell

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引用次数: 2

摘要

我们报告了一个250nm的InP HBT MMIC，其芯片尺寸显示了44 GHz的创纪录输出功率，具有25 - 50 GHz的小信号带宽，并在2.5-2.8 V电源下工作。该功率放大器的输出功率高达185mw，在44ghz时峰值PAE为38%。这项工作的结果强调了250nm InP HBT器件与新兴尺寸受限平台的相关性，包括MIMO通信前端和雷达应用。

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185mW InP HBT Power Amplifier with 1 Octave Bandwidth (2550GHz), 38% peak PAE at 44GHz and Chip Area of 276 x 672 μm2

We report a 250nm InP HBT MMIC that demonstrates record output power at 44 GHz for its chip size, having a small signal bandwidth of 25 - 50 GHz, and operating from a 2.5-2.8 V supply. The reported power amplifier delivers up to 185 mW and has a peak PAE of 38% at 44 GHz. The results in this work highlight the relevance of 250nm InP HBT devices for emerging size-constrained platforms including MIMO communication front-ends and radar applications.

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2019 IEEE MTT-S International Microwave Symposium (IMS)

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