退火温度对Al/ZrO2/p-Si MOS电容器电性能的影响

IF 1.3 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Ferroelectrics Letters Section Pub Date : 2021-04-29 DOI:10.1080/07315171.2021.1923119

A. Singh, S. Singh

{"title":"退火温度对Al/ZrO2/p-Si MOS电容器电性能的影响","authors":"A. Singh, S. Singh","doi":"10.1080/07315171.2021.1923119","DOIUrl":null,"url":null,"abstract":"Abstract The present study reveals that ZrO2 MOS capacitor has been fabricated by RF sputtering technique. The maximum refractive index has been found to be 2.29 at 400 °C. From capacitance-voltage graph, it has been observed that the memory window and accumulation capacitance has been found to be maximum at 400 °C. The maximum memory window and accumulation capacitance has been found to be 0.50 V and 7.00 ×10−11 F, respectively. The flat band voltage shifts toward positive side at all temperatures. From current-voltage curve, it has been observed that the leakage current is found to be low at 400 °C and it is order of 10 − 7A at +20 V.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":"35 1","pages":"40 - 45"},"PeriodicalIF":1.3000,"publicationDate":"2021-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of annealing temperature on electrical properties of Al/ZrO2/p-Si MOS capacitor\",\"authors\":\"A. Singh, S. Singh\",\"doi\":\"10.1080/07315171.2021.1923119\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract The present study reveals that ZrO2 MOS capacitor has been fabricated by RF sputtering technique. The maximum refractive index has been found to be 2.29 at 400 °C. From capacitance-voltage graph, it has been observed that the memory window and accumulation capacitance has been found to be maximum at 400 °C. The maximum memory window and accumulation capacitance has been found to be 0.50 V and 7.00 ×10−11 F, respectively. The flat band voltage shifts toward positive side at all temperatures. From current-voltage curve, it has been observed that the leakage current is found to be low at 400 °C and it is order of 10 − 7A at +20 V.\",\"PeriodicalId\":50451,\"journal\":{\"name\":\"Ferroelectrics Letters Section\",\"volume\":\"35 1\",\"pages\":\"40 - 45\"},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2021-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ferroelectrics Letters Section\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1080/07315171.2021.1923119\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectrics Letters Section","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1080/07315171.2021.1923119","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 1

摘要

摘要:本研究采用射频溅射技术制备了ZrO2 MOS电容器。400℃时的最大折射率为2.29。从电容-电压图可以看出，在400℃时，记忆窗口和积累电容最大。最大记忆窗口和累积电容分别为0.50 V和7.00 ×10−11 F。在所有温度下，平带电压都向正极方向移动。从电流-电压曲线可以观察到，在400°C时泄漏电流很小，在+20 V时泄漏电流为10−7A数量级。

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Effect of annealing temperature on electrical properties of Al/ZrO2/p-Si MOS capacitor

Abstract The present study reveals that ZrO2 MOS capacitor has been fabricated by RF sputtering technique. The maximum refractive index has been found to be 2.29 at 400 °C. From capacitance-voltage graph, it has been observed that the memory window and accumulation capacitance has been found to be maximum at 400 °C. The maximum memory window and accumulation capacitance has been found to be 0.50 V and 7.00 ×10−11 F, respectively. The flat band voltage shifts toward positive side at all temperatures. From current-voltage curve, it has been observed that the leakage current is found to be low at 400 °C and it is order of 10 − 7A at +20 V.

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来源期刊

Ferroelectrics Letters Section 物理-物理：凝聚态物理

CiteScore

1.10

自引率

0.00%

发文量

审稿时长

4.8 months

期刊介绍： Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals. Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.