溅射制备MgxZn1−xO薄膜的成分依赖性

2011 Second International Conference on Mechanic Automation and Control Engineering Pub Date : 2011-07-15 DOI:10.1109/MACE.2011.5987130

Hui Li, Shibin Liu, E. Xie

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引用次数: 0

摘要

本文研究了MgxZn1−xO薄膜的组成对薄膜性能的影响。实验表明，溅射制备的薄膜的组成受环境条件和退火温度的影响。Mg含量的增加有利于提高薄膜的晶体质量，而没有改变薄膜的纤锌矿结构。带隙在3.4 ~ 4.0 eV之间变化，这与薄膜中Mg的含量有关，与先前报道的合金薄膜理论一致。以上结果表明，溅射制备的MgxZn1−xO薄膜可以作为zno基异质结构中的势垒层。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Composition-dependent properties of MgxZn1−xO films by sputtering

The properties of MgxZn1−xO films dependent on composition were studied in this paper. The experiment showed that the composition of films prepared by sputtering was affected by ambient condition and annealing temperature. The increasing Mg content was in favor of increasing crystal quality of films, and didn't change the wurtzite structure of films. The band gap changed between 3.4 and 4.0 eV, which was dependent on Mg content in films and consistent well with the previous reported theory on alloyed films. These results above showed that MgxZn1−xO films by sputtering could be used as barrier layers in ZnO-based heterostructures.

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2011 Second International Conference on Mechanic Automation and Control Engineering

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