浮水蒿子叶微颗粒的合成及其在镉吸附中的应用

Nichodimus Hokonya, C. Mahamadi
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引用次数: 1

摘要

以浮水芡实为原料制备了微颗粒,并将其用作间歇体系中Cd(II)的吸附剂。通过改变初始Cd (II)浓度、pH值、接触时间和吸附剂剂量等参数,研究了吸附Cd (II)的最佳条件。结果表明,吸附Cd(II)的最佳参数为pH 5.0、投加量2 g/L、初始Cd(II)浓度50 mg/L、接触时间240 min。结果表明:Langmuir最大吸附值为20.41 mg/g,分离系数在0.72 ~ 0.91之间,表明该吸附工艺可行。采用Dubinin Radushkevich模型得到的吸附E值为5.59 kJ/mol,表明吸附过程为物理吸附过程。采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、傅里叶变换红外光谱(FT-IR)、热重分析(TGA)和能量色散x射线能谱(EDX)对微颗粒的结构进行了表征。EDX谱图表明,在蒸汽爆炸过程中,存在的大部分无机杂质被完全去除。FT-IR光谱证实,微粒中存在的有可能参与吸附的官能团是羟基。研究表明,该材料是一种良好的吸附剂。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis of micro-particles using Hydrocotyle Ranunculoides (Floating Water Pennywort) and their use in Cadmium adsorption.
Microparticles were prepared using Hydrocotyle ranunculoides (Floating Water Pennywort) and subsequently used as adsorbent for Cd(II) from aqueous solution in batch systems. The optimum conditions for Cd (II) adsorption were investigated by varying the parameters: initial Cd (II) concentration, pH value, contact time, and adsorbent dose. It was shown that the optimum parameters for Cd(II) adsorption were pH 5.0, dosage 2 g/L, initial Cd (II) concentration 50 mg/L and contact time 240 minutes. The results showed a Langmuir maximum adsorption value of 20.41 mg/g and a separation factor between 0.72 and 0.91, suggesting a feasible adsorption process. An E value of 5.59 kJ/mol which was obtained using the Dubinin Radushkevich model indicated that the adsorption process was physical in nature. The structure of micro-particles was characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier-transform infrared spectroscopy (FT-IR), Thermo Gravimetric Analysis (TGA), and Energy-Dispersive X-ray spectroscopy (EDX). The EDX profile shows that most inorganic impurities present were totally removed during the steam explosion process. The functional groups present in micro-particles, which have the potential to take part in adsorption are hydroxyl groups as confirmed by the FT-IR spectra. The study showed that the material is a good adsorbent.
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