J. Arya Lekshmi, T. Nandha Kumar, A. Haider, K. Jinesh
{"title":"Au/Al2O3/FTO器件中的自整流自限阻性开关","authors":"J. Arya Lekshmi, T. Nandha Kumar, A. Haider, K. Jinesh","doi":"10.1109/NANO51122.2021.9514299","DOIUrl":null,"url":null,"abstract":"In this paper, filament-based resistive switching of Au/ Al2O3/FTO device stack is discussed. The proposed device exhibited a self-limited, self-rectified, asymmetric current-voltage characteristic with excellent Roff/Ron ratio >400 and rectification ratio >200. Also, the device has shown good retention(>103) property. Moreover, it has been observed that the device exhibits non-zero crossover characteristics predominantly seen in negatively formed devices, emulating the behavior of a one diode-one RRAM combination. Besides, it is reported that by modulating the input voltage sweeps, we can fine-tune the device characteristics to achieve asymmetric, analog, or digital switching properties to use in desired applications.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"65 1","pages":"17-20"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-rectifying self-limited Resistive switching in Au/Al2O3/FTO Devices\",\"authors\":\"J. Arya Lekshmi, T. Nandha Kumar, A. Haider, K. Jinesh\",\"doi\":\"10.1109/NANO51122.2021.9514299\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, filament-based resistive switching of Au/ Al2O3/FTO device stack is discussed. The proposed device exhibited a self-limited, self-rectified, asymmetric current-voltage characteristic with excellent Roff/Ron ratio >400 and rectification ratio >200. Also, the device has shown good retention(>103) property. Moreover, it has been observed that the device exhibits non-zero crossover characteristics predominantly seen in negatively formed devices, emulating the behavior of a one diode-one RRAM combination. Besides, it is reported that by modulating the input voltage sweeps, we can fine-tune the device characteristics to achieve asymmetric, analog, or digital switching properties to use in desired applications.\",\"PeriodicalId\":6791,\"journal\":{\"name\":\"2021 IEEE 21st International Conference on Nanotechnology (NANO)\",\"volume\":\"65 1\",\"pages\":\"17-20\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 21st International Conference on Nanotechnology (NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO51122.2021.9514299\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO51122.2021.9514299","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Self-rectifying self-limited Resistive switching in Au/Al2O3/FTO Devices
In this paper, filament-based resistive switching of Au/ Al2O3/FTO device stack is discussed. The proposed device exhibited a self-limited, self-rectified, asymmetric current-voltage characteristic with excellent Roff/Ron ratio >400 and rectification ratio >200. Also, the device has shown good retention(>103) property. Moreover, it has been observed that the device exhibits non-zero crossover characteristics predominantly seen in negatively formed devices, emulating the behavior of a one diode-one RRAM combination. Besides, it is reported that by modulating the input voltage sweeps, we can fine-tune the device characteristics to achieve asymmetric, analog, or digital switching properties to use in desired applications.
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