多量子势垒纳米雪崩光电二极管。第三部分:时间和频率响应

Nanoscience & Nanotechnology-Asia Pub Date : 2019-05-31 DOI:10.2174/2210681208666180813122642

Somrita Ghosh, A. Acharyya

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引用次数: 1

摘要

最后研究了基于Si~3C-SiC材料体系的多量子势垒(MQB)纳米雪崩光电二极管(apd)的时频响应。采用脉冲宽度为0.4 ps的极窄矩形脉冲作为输入光脉冲，在MQB APD结构的p+侧入射850 nm波长的光脉冲，并利用作者开发的模拟方法计算了相应的电流响应。最后通过脉冲电流响应在时域的傅里叶变换得到器件的频率响应。仿真结果表明，在相同的工作条件下，MQB纳米apd比扁平Si纳米apd具有更快的时间响应和更宽的频率响应。

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Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

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Nanoscience & Nanotechnology-Asia

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