Y. M. Chee, H. M. Kiah, A. Vinck, Van Khu Vu, Eitan Yaakobi
{"title":"写升压存储器的编码","authors":"Y. M. Chee, H. M. Kiah, A. Vinck, Van Khu Vu, Eitan Yaakobi","doi":"10.1109/ISIT.2019.8849835","DOIUrl":null,"url":null,"abstract":"In this work, we propose and study a new class of non-binary rewriting codes, called write ℓ-step-up memories (WℓM) codes. From an information-theoretic point of view, this coding scheme is a generalization of non-binary write-once memories (WOM) codes. From a practical point of view, this coding scheme can be used not only to increase the lifetime of flash memories but also mitigate their over-shooting problem. We first provide an exact formula for the capacity region and the maximum sum-rate of WℓM codes. Lastly, we present several explicit constructions of high-rate WℓM codes with efficient encoding/decoding algorithms.","PeriodicalId":6708,"journal":{"name":"2019 IEEE International Symposium on Information Theory (ISIT)","volume":"39 1","pages":"1597-1601"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Coding for Write ℓ-step-up Memories\",\"authors\":\"Y. M. Chee, H. M. Kiah, A. Vinck, Van Khu Vu, Eitan Yaakobi\",\"doi\":\"10.1109/ISIT.2019.8849835\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we propose and study a new class of non-binary rewriting codes, called write ℓ-step-up memories (WℓM) codes. From an information-theoretic point of view, this coding scheme is a generalization of non-binary write-once memories (WOM) codes. From a practical point of view, this coding scheme can be used not only to increase the lifetime of flash memories but also mitigate their over-shooting problem. We first provide an exact formula for the capacity region and the maximum sum-rate of WℓM codes. Lastly, we present several explicit constructions of high-rate WℓM codes with efficient encoding/decoding algorithms.\",\"PeriodicalId\":6708,\"journal\":{\"name\":\"2019 IEEE International Symposium on Information Theory (ISIT)\",\"volume\":\"39 1\",\"pages\":\"1597-1601\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Symposium on Information Theory (ISIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISIT.2019.8849835\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Symposium on Information Theory (ISIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISIT.2019.8849835","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this work, we propose and study a new class of non-binary rewriting codes, called write ℓ-step-up memories (WℓM) codes. From an information-theoretic point of view, this coding scheme is a generalization of non-binary write-once memories (WOM) codes. From a practical point of view, this coding scheme can be used not only to increase the lifetime of flash memories but also mitigate their over-shooting problem. We first provide an exact formula for the capacity region and the maximum sum-rate of WℓM codes. Lastly, we present several explicit constructions of high-rate WℓM codes with efficient encoding/decoding algorithms.