用MPCVD法在Si(100)晶圆上沉积C - N薄膜

Transactions (English Ceramic Circle) Pub Date : 2012-04-25 DOI:10.1002/9781118408162.CH9

R. Kukreja, Raj N. Singh

{"title":"用MPCVD法在Si(100)晶圆上沉积C - N薄膜","authors":"R. Kukreja, Raj N. Singh","doi":"10.1002/9781118408162.CH9","DOIUrl":null,"url":null,"abstract":"Carbonitride (C-N) thin films are deposited on Si (100) in a microwave plasma chemical vapor deposition system using CH4, H 2 and N 2 as precursor gases. Effects of deposition parameters such as microwave power, gas pressure, and flow rates of precursor gases on the films produced is studied. Raman spectroscopy, X-Ray diffraction, and scanning electron microscopy are used for characterization of these films. It is shown that the composition of films deposited depends on the starting precursor gas and pressure.","PeriodicalId":83360,"journal":{"name":"Transactions (English Ceramic Circle)","volume":"4 1","pages":"89-94"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis and Characterization of C‐N Thin Films Deposited on Si (100) Wafer by MPCVD\",\"authors\":\"R. Kukreja, Raj N. Singh\",\"doi\":\"10.1002/9781118408162.CH9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Carbonitride (C-N) thin films are deposited on Si (100) in a microwave plasma chemical vapor deposition system using CH4, H 2 and N 2 as precursor gases. Effects of deposition parameters such as microwave power, gas pressure, and flow rates of precursor gases on the films produced is studied. Raman spectroscopy, X-Ray diffraction, and scanning electron microscopy are used for characterization of these films. It is shown that the composition of films deposited depends on the starting precursor gas and pressure.\",\"PeriodicalId\":83360,\"journal\":{\"name\":\"Transactions (English Ceramic Circle)\",\"volume\":\"4 1\",\"pages\":\"89-94\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Transactions (English Ceramic Circle)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/9781118408162.CH9\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transactions (English Ceramic Circle)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/9781118408162.CH9","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在微波等离子体化学气相沉积系统中，以CH4、h2和n2为前驱气体，在Si(100)表面沉积碳氮化合物(C-N)薄膜。研究了微波功率、气体压力、前驱体气体流速等沉积参数对制备膜的影响。拉曼光谱，x射线衍射和扫描电子显微镜用于表征这些薄膜。结果表明，沉积膜的组成取决于起始前驱体气体和压力。

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Synthesis and Characterization of C‐N Thin Films Deposited on Si (100) Wafer by MPCVD

Carbonitride (C-N) thin films are deposited on Si (100) in a microwave plasma chemical vapor deposition system using CH4, H 2 and N 2 as precursor gases. Effects of deposition parameters such as microwave power, gas pressure, and flow rates of precursor gases on the films produced is studied. Raman spectroscopy, X-Ray diffraction, and scanning electron microscopy are used for characterization of these films. It is shown that the composition of films deposited depends on the starting precursor gas and pressure.

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Transactions (English Ceramic Circle)

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