GaAs/AlAs多层膜中声子和近红外光子的能带反演同时约束

International Conference on Nanoscience, Engineering and Technology (ICONSET 2011) Pub Date : 2022-10-03 DOI:10.1117/12.2633360

P. Priya, Anne Rodriguez, O. Ortiz, A. Lemaître, M. Esmann, N. Lanzillotti-Kimura

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引用次数: 0

摘要

GaAs/AlAs异质结构为光声子系统的概念、工程和实现提供了一个独特的平台。除了从光电子工业继承的所有积累的专有技术外，光学和声学阻抗的对比以及光和声速的独特巧合，使光电和声学位移场能够完美地共定位。我们提出了支持拓扑界面模式的GaAs/AlAs光声子异质结构的设计原则，并进一步分析了这些结构在光学和声学领域的性能。

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Simultaneous confinement of acoustic phonons and near infrared photons in GaAs/AlAs multilayers by band inversion

GaAs/AlAs heterostructures constitute a unique platform for the conception, engineering, and implementation of opto-phononic systems. In addition to all the accumulated know-how inherited from the optoelectronics industry, a unique coincidence in the contrasts of the optical and acoustic impedances, and the speeds of light and sound, enable a perfect colocalization of the optical electric and acoustic displacement fields. We present the design principles for GaAs/AlAs opto-phononic heterostructures supporting topological interface modes and further analyse the performance of these structures in the optical and the acoustic domain.

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International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)

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