三维NAND技术分析及基于电荷阱和基于浮栅的闪存器件的比较

Q4 Computer Science
L. Shijun, Zou Xuecheng
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引用次数: 5

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本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of 3D NAND technologies and comparison between charge-trap-based and floating-gate-based flash devices
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来源期刊
CiteScore
0.50
自引率
0.00%
发文量
1878
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