ZnTe:Cu薄膜性能及其对CdS/CdTe器件的影响

B. Faulkner, J. Burst, T. Ohno, C. Perkins, B. To, T. Gessert
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引用次数: 7

摘要

含有溅射ZnTe:Cu界面层的背触点可以生产高性能薄膜CdS/CdTe光伏器件。我们发现,ZnTe:Cu溅射靶材制作工艺的微小变化会影响ZnTe:Cu薄膜的性能,从而影响最终器件的性能。研究了不同靶材制造工艺对ZnTe:Cu薄膜性能的影响。研究了不同靶材配方制备的薄膜的组成、光学和电学性能。研究发现,靶材和薄膜中氧的含量与材料性能的变化密切相关,尤其是带尾和光带隙的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ZnTe:Cu film properties and their impact on CdS/CdTe devices
A back contact containing a sputtered ZnTe:Cu interface layer can produce high-performing thin-film CdS/CdTe photovoltaic devices. We have found that small changes in ZnTe:Cu sputtering target fabrication processes affect the properties of the ZnTe:Cu films, which affect the performance of the resulting devices. Different target manufacturing techniques were investigated to study changes in ZnTe:Cu film properties and how they impact device performance. Compositional, optical, and electrical properties of films made from different target recipes were studied. It was found that the amount of oxygen in the targets and films is strongly linked to changes in material properties, especially in band tailing and optical bandgap.
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