基于差分p-ISFET的片上pH传感器,具有基于衬底的漂移复位能力

Vaishak Prathap, A. Titus
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引用次数: 1

摘要

本文提出了一种单片,廉价,无标签,坚固的pH传感器,可以在未经修改的CMOS工艺中制造。该传感器采用差分p-ISFET架构,大大减少了非理想共模效应,这种效应会破坏基于ISFET的pH传感器的读出,并且只占用很小的占地面积。此外,该设计还提供了通过控制n井电压来校正漂移的能力,这是以前没有证明过的。我们介绍了通过测试在AMS 0.35μm工艺中制造的传感器获得的结果,包括漂移校正的演示。我们展示了在整个pH范围内15 mV/pH的差分灵敏度,并且能够使用体源电压调节去除已经很小的0.1 mV/min漂移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A differential p-ISFET based on-chip pH sensor with substrate based drift reset capability
This paper presents a monolithic, inexpensive, label free, robust pH sensor that can be fabricated in an unmodified CMOS process. The sensor uses a differential p-ISFET architecture which substantially reduces non-ideal common mode effects which corrupt readout in ISFET based pH sensors and occupy only a small footprint. Additionally, the design offers the capability to correct for drift through control of the n-well voltage, which has not been demonstrated previously. We present results obtained from testing the sensor that is fabricated in the AMS 0.35μm process, including a demonstration of the drift correction. We demonstrate a differential sensitivity of 15 mV/pH over the entire pH range, with the ability to remove the already small drift of 0.1 mV/min using the bulk-source voltage adjustment.
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