Influence of Annealing on Zn1-Xcuxo (X=6.27%) Thin Films by Sol-Gel Method

Using the sol-gel method on glass substrate were prepared under different annealing temperature of the thin film Zn1-xCuxO (x = 6.27%). Using X-ray diffraction (XRD), atomic force microscopy study annealing on microstructure of the thin films, the influence of surface topography. The results show that the annealing temperature did not change the wurtzite structure of ZnO, 400 degrees of annealed film density uniform, best film. In the transmission spectra of zno thin films, the transmittance in the visible light range along with the change of the annealing temperature is not big, and the absorption edge of blue shift. From the point of light at room temperature to spectrum, annealing temperature changes with photoluminescence peak position, other did not significantly change the ZnO thin film luminescence peak position, but make zinc deficiency increased with annealing, visible region photoluminescence peak strength obvious enhancement.