合成紧密结合晶格中输运的反绝热控制

E. Meier, K. Ngan, Dries Sels, B. Gadway
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引用次数: 2

摘要

对实验缺陷具有鲁棒性的量子态变换对于量子信息科学和量子传感的应用非常重要。反非绝热(CD)方法利用底层系统哈密顿量的知识来主动校正非绝热效应,是同时实现快速稳定状态转换的强大工具。迄今为止,CD驱动协议的实验实现仅限于只有两个或三个级别的离散系统,以及具有缩放对称性的批量系统。在这里,我们将CD控制工具扩展到由多达9个位点组成的离散合成晶格系统。尽管该系统有一个消失的间隙,因此在热力学极限下没有绝热支持,但我们表明,CD方法仍然可以在保真度上提供实质性的,几个数量级的改进,而不是简单的,快速的绝热协议。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Counterdiabatic control of transport in a synthetic tight-binding lattice
Quantum state transformations that are robust to experimental imperfections are important for applications in quantum information science and quantum sensing. Counterdiabatic (CD) approaches, which use knowledge of the underlying system Hamiltonian to actively correct for diabatic effects, are powerful tools for achieving simultaneously fast and stable state transformations. Protocols for CD driving have thus far been limited in their experimental implementation to discrete systems with just two or three levels, as well as bulk systems with scaling symmetries. Here, we extend the tool of CD control to a discrete synthetic lattice system composed of as many as nine sites. Although this system has a vanishing gap and thus no adiabatic support in the thermodynamic limit, we show that CD approaches can still give a substantial, several order-of-magnitude, improvement in fidelity over naive, fast adiabatic protocols.
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