半导体中极非简并非线性折射的色散

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI:10.1109/IPCON.2017.8116291

Peng Zhao, D. Hagan, E. V. Van Stryland

{"title":"半导体中极非简并非线性折射的色散","authors":"Peng Zhao, D. Hagan, E. V. Van Stryland","doi":"10.1109/IPCON.2017.8116291","DOIUrl":null,"url":null,"abstract":"Dispersion of nondegenerate nonlinear refraction in semiconductors is measured using the Beam-Deflection technique. With large nondegeneracy, n2 is greatly enhanced and exhibits a strong nonlinear dispersion, which rapidly switches sign to negative near the bandgap. Potential applications including nondegenerate all-optical switching and pulse shaping are discussed.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"28 1","pages":"711-712"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Dispersion of extremely nondegenerate nonlinear refraction in semiconductors\",\"authors\":\"Peng Zhao, D. Hagan, E. V. Van Stryland\",\"doi\":\"10.1109/IPCON.2017.8116291\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dispersion of nondegenerate nonlinear refraction in semiconductors is measured using the Beam-Deflection technique. With large nondegeneracy, n2 is greatly enhanced and exhibits a strong nonlinear dispersion, which rapidly switches sign to negative near the bandgap. Potential applications including nondegenerate all-optical switching and pulse shaping are discussed.\",\"PeriodicalId\":6657,\"journal\":{\"name\":\"2017 IEEE Photonics Conference (IPC) Part II\",\"volume\":\"28 1\",\"pages\":\"711-712\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Photonics Conference (IPC) Part II\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPCON.2017.8116291\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Photonics Conference (IPC) Part II","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPCON.2017.8116291","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

利用光束偏转技术测量了半导体中非简并非线性折射的色散。由于具有较大的非简并性，n2被大大增强，并表现出强烈的非线性色散，在带隙附近迅速切换符号为负。讨论了非简并全光开关和脉冲整形等潜在应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Dispersion of extremely nondegenerate nonlinear refraction in semiconductors

Dispersion of nondegenerate nonlinear refraction in semiconductors is measured using the Beam-Deflection technique. With large nondegeneracy, n2 is greatly enhanced and exhibits a strong nonlinear dispersion, which rapidly switches sign to negative near the bandgap. Potential applications including nondegenerate all-optical switching and pulse shaping are discussed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 IEEE Photonics Conference (IPC) Part II

自引率

0.00%

发文量