横向DMOS晶体管的热载流子可靠性

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843910

Vicky O’Donovan, Shay Whiston, A. Deignan, C. N. Chléirigh

{"title":"横向DMOS晶体管的热载流子可靠性","authors":"Vicky O’Donovan, Shay Whiston, A. Deignan, C. N. Chléirigh","doi":"10.1109/RELPHY.2000.843910","DOIUrl":null,"url":null,"abstract":"The focus of this paper is on the degradation induced by hot-electrons in lateral DMOS transistors. The physical justification for the abandonment of the existing CMOS test methods is explained. Simulation results supporting the hot-carrier phenomenon occurring are reported and both parametrically and experimentally determined hot-electron safe-operation-areas (HE-SOA) are examined for reliable device operation of 20 V LDNMOS and 20 V LDPMOS.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"Hot carrier reliability of lateral DMOS transistors\",\"authors\":\"Vicky O’Donovan, Shay Whiston, A. Deignan, C. N. Chléirigh\",\"doi\":\"10.1109/RELPHY.2000.843910\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The focus of this paper is on the degradation induced by hot-electrons in lateral DMOS transistors. The physical justification for the abandonment of the existing CMOS test methods is explained. Simulation results supporting the hot-carrier phenomenon occurring are reported and both parametrically and experimentally determined hot-electron safe-operation-areas (HE-SOA) are examined for reliable device operation of 20 V LDNMOS and 20 V LDPMOS.\",\"PeriodicalId\":6387,\"journal\":{\"name\":\"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2000.843910\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2000.843910","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 32

摘要

本文重点研究了横向DMOS晶体管中热电子引起的性能退化问题。解释了放弃现有CMOS测试方法的物理理由。本文报道了支持热载流子现象发生的模拟结果，并对20 V LDNMOS和20 V LDPMOS的参数化和实验确定的热电子安全操作区域(HE-SOA)进行了检验。

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Hot carrier reliability of lateral DMOS transistors

The focus of this paper is on the degradation induced by hot-electrons in lateral DMOS transistors. The physical justification for the abandonment of the existing CMOS test methods is explained. Simulation results supporting the hot-carrier phenomenon occurring are reported and both parametrically and experimentally determined hot-electron safe-operation-areas (HE-SOA) are examined for reliable device operation of 20 V LDNMOS and 20 V LDPMOS.

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2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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