常压MOVPE生长极低阈值电流密度GaInAs/Al(Ga)InAs激光结构

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147341

R. Gessner, M. Beschorner, M. Druminski

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引用次数: 1

摘要

介绍了利用金属有机气相外延(MOVPE)在常压下生长高质量激光器件用(Al)GaInAs/Al(Ga)InAs结构的方法。采用SeH/ sub2 /和DEZn作为掺杂前驱体。Se是n型激光器约束层的合适掺杂剂，在AlInAs中表现出明显高于Si的电激活。作为p型激光器约束层的掺杂剂，Zn的表观扩散系数比AlInAs中的Mg低一个数量级，因此优于Mg。在1.66 μ m和1.55 μ m波段工作的广域双异质结构(DH)激光器(器件长度=800 μ m)的I/sub /值分别低至2.3 kA/cm/sup 2/和1.5 kA/cm/sup 2/。采用器件长度为800 μ m的广域分离束缚异质结构多量子阱(SCH-MQW)激光器，发射波长为1.524 μ m，可实现低至0.92 kA/cm/sup 2/的阈值电流密度。

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Very low threshold current density (Al)GaInAs/Al(Ga)InAs laser structures grown by atmospheric pressure MOVPE

The growth of (Al)GaInAs/Al(Ga)InAs structures of high quality for laser devices using metalorganic vapor-phase epitaxy (MOVPE) at atmospheric pressure is described. SeH/sub 2/ and DEZn have been used as the dopant precursors. Se is an appropriate dopant for the n-type confinement layers of lasers, showing a distinctly higher electrical activation in AlInAs than Si. Zn is superior to Mg as a dopant for the p-type confinement layers of lasers as its apparent diffusion coefficient is about one order of magnitude lower than that of Mg in AlInAs. Broad-area double-heterostructure (DH) lasers (device length=800 mu m) operating at 1.66 mu m and 1.55 mu m are shown to have I/sub th/ values as low as 2.3 kA cm/sup 2/ and 1.5 kA/cm/sup 2/, respectively. With broad-area separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers (device length=800 mu m) emitting at 1.524 mu m, threshold current densities as low is 0.92 kA/cm/sup 2/ can be achieved.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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