M. Cai, Hyunwoo Park, Jackie Yang, Youseok Suh, Jun Chen, Yandong Gao, Lunwei Chang, John Zhu, S. C. Song, Jihong Choi, Gary Chen, Bo Yu, Xiao-Yong Wang, V. Huang, Gudoor Reddy, Nagaraj Kelageri, D. Kidd, P. Pénzes, W. Chung, S. Yang, S.B. Lee, B. Tien, G. Nallapati, S. Wu, P. Chidambaram
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7nm Mobile SoC and 5G Platform Technology and Design Co-Development for PPA and Manufacturability
We report on Qualcomm® Snapdragon™ SDM855 mobile SoC and world's first commercial 5G platform using industry-leading 7nm FINFET technologies. SDM855 exhibits $> 30\%$ CPU performance gain over the previous generation thanks to a new design architecture enabled by dual poly pitch process integration. Low voltage operation and tight spread in power consumption has been achieved through process and design co-development, delivering a high performance and low power solution for both mobile and AI applications. Extending the 7nm technology with 2nd-year process enhancement demonstrates up to 50mV CPU Vmin reduction without any change to design rules, which paves the road for an integrated 5G mobile platform with $> 10\text{Gbps}$ connectivity.
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