{"title":"采用低温牺牲工艺的SAW器件的P3I-3晶圆级芯片封装","authors":"K. Koh, T. Yamazaki, K. Hohkawa","doi":"10.1109/ULTSYM.2007.475","DOIUrl":null,"url":null,"abstract":"In this paper, we report a basic study on wafer level chip size packaging (WL-CSP) process of SAW devices using low temperature sacrifice process. We used the dry film photoresist as sacrifice layer because it has advantage such as low treating temperature (<120 degree), easily coating on the surface of wafer and easily to removal by organic solution. We proposed several processes using dry film photoresist for different purpose. We investigated various processing conditions and successfully fabricated a cavity with small size as active area of the SAW device. The experimental results confirmed feasibility of the dry film photoresist used in WL-CSP technology of SAW device.","PeriodicalId":6355,"journal":{"name":"2007 IEEE Ultrasonics Symposium Proceedings","volume":"26 1","pages":"1890-1893"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"P3I-3 Wafer Level Chip Size Packaging of SAW Devices Using Low Temperature Sacrifice Process\",\"authors\":\"K. Koh, T. Yamazaki, K. Hohkawa\",\"doi\":\"10.1109/ULTSYM.2007.475\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report a basic study on wafer level chip size packaging (WL-CSP) process of SAW devices using low temperature sacrifice process. We used the dry film photoresist as sacrifice layer because it has advantage such as low treating temperature (<120 degree), easily coating on the surface of wafer and easily to removal by organic solution. We proposed several processes using dry film photoresist for different purpose. We investigated various processing conditions and successfully fabricated a cavity with small size as active area of the SAW device. The experimental results confirmed feasibility of the dry film photoresist used in WL-CSP technology of SAW device.\",\"PeriodicalId\":6355,\"journal\":{\"name\":\"2007 IEEE Ultrasonics Symposium Proceedings\",\"volume\":\"26 1\",\"pages\":\"1890-1893\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Ultrasonics Symposium Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULTSYM.2007.475\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Ultrasonics Symposium Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.2007.475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
P3I-3 Wafer Level Chip Size Packaging of SAW Devices Using Low Temperature Sacrifice Process
In this paper, we report a basic study on wafer level chip size packaging (WL-CSP) process of SAW devices using low temperature sacrifice process. We used the dry film photoresist as sacrifice layer because it has advantage such as low treating temperature (<120 degree), easily coating on the surface of wafer and easily to removal by organic solution. We proposed several processes using dry film photoresist for different purpose. We investigated various processing conditions and successfully fabricated a cavity with small size as active area of the SAW device. The experimental results confirmed feasibility of the dry film photoresist used in WL-CSP technology of SAW device.