采用低温牺牲工艺的SAW器件的P3I-3晶圆级芯片封装

K. Koh, T. Yamazaki, K. Hohkawa
{"title":"采用低温牺牲工艺的SAW器件的P3I-3晶圆级芯片封装","authors":"K. Koh, T. Yamazaki, K. Hohkawa","doi":"10.1109/ULTSYM.2007.475","DOIUrl":null,"url":null,"abstract":"In this paper, we report a basic study on wafer level chip size packaging (WL-CSP) process of SAW devices using low temperature sacrifice process. We used the dry film photoresist as sacrifice layer because it has advantage such as low treating temperature (<120 degree), easily coating on the surface of wafer and easily to removal by organic solution. We proposed several processes using dry film photoresist for different purpose. We investigated various processing conditions and successfully fabricated a cavity with small size as active area of the SAW device. The experimental results confirmed feasibility of the dry film photoresist used in WL-CSP technology of SAW device.","PeriodicalId":6355,"journal":{"name":"2007 IEEE Ultrasonics Symposium Proceedings","volume":"26 1","pages":"1890-1893"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"P3I-3 Wafer Level Chip Size Packaging of SAW Devices Using Low Temperature Sacrifice Process\",\"authors\":\"K. Koh, T. Yamazaki, K. Hohkawa\",\"doi\":\"10.1109/ULTSYM.2007.475\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report a basic study on wafer level chip size packaging (WL-CSP) process of SAW devices using low temperature sacrifice process. We used the dry film photoresist as sacrifice layer because it has advantage such as low treating temperature (<120 degree), easily coating on the surface of wafer and easily to removal by organic solution. We proposed several processes using dry film photoresist for different purpose. We investigated various processing conditions and successfully fabricated a cavity with small size as active area of the SAW device. The experimental results confirmed feasibility of the dry film photoresist used in WL-CSP technology of SAW device.\",\"PeriodicalId\":6355,\"journal\":{\"name\":\"2007 IEEE Ultrasonics Symposium Proceedings\",\"volume\":\"26 1\",\"pages\":\"1890-1893\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Ultrasonics Symposium Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULTSYM.2007.475\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Ultrasonics Symposium Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.2007.475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

本文报道了基于低温牺牲工艺的SAW器件晶圆级芯片尺寸封装(WL-CSP)工艺的基本研究。我们选用干膜光刻胶作为牺牲层,因为它具有处理温度低(<120度)、易涂覆在晶圆片表面、易被有机溶液去除等优点。我们提出了几种不同用途的干膜光刻胶工艺。我们研究了不同的加工条件,成功地制作了一个小尺寸的空腔作为SAW器件的有源区。实验结果证实了干膜光刻胶用于SAW器件WL-CSP技术的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
P3I-3 Wafer Level Chip Size Packaging of SAW Devices Using Low Temperature Sacrifice Process
In this paper, we report a basic study on wafer level chip size packaging (WL-CSP) process of SAW devices using low temperature sacrifice process. We used the dry film photoresist as sacrifice layer because it has advantage such as low treating temperature (<120 degree), easily coating on the surface of wafer and easily to removal by organic solution. We proposed several processes using dry film photoresist for different purpose. We investigated various processing conditions and successfully fabricated a cavity with small size as active area of the SAW device. The experimental results confirmed feasibility of the dry film photoresist used in WL-CSP technology of SAW device.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信