{"title":"单晶中的层错","authors":"Mihir M. Vora, A. Vora","doi":"10.15407/spqeo12.04.421","DOIUrl":null,"url":null,"abstract":"0 ≤ ≤ x have been grown by a direct vapour transport techn ique (DVT) in the laboratory. The structural characterizations of these crystals are made by XRD method. The particle size for a nu mber of reflections has been calculated using the Scherrer’s formula. A con siderable variation is shown in the deformation ( α ) and growth ( β ) fault probabilities in In xMoSe 2 ( ) 1 0 ≤ ≤ x single crystal due to off-stoichiometry, which pos sesses the stacking fault in the single crystal.","PeriodicalId":7403,"journal":{"name":"African Review of Physics","volume":"12 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"STACKING FAULTS IN THE SINGLE CRYSTALS\",\"authors\":\"Mihir M. Vora, A. Vora\",\"doi\":\"10.15407/spqeo12.04.421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"0 ≤ ≤ x have been grown by a direct vapour transport techn ique (DVT) in the laboratory. The structural characterizations of these crystals are made by XRD method. The particle size for a nu mber of reflections has been calculated using the Scherrer’s formula. A con siderable variation is shown in the deformation ( α ) and growth ( β ) fault probabilities in In xMoSe 2 ( ) 1 0 ≤ ≤ x single crystal due to off-stoichiometry, which pos sesses the stacking fault in the single crystal.\",\"PeriodicalId\":7403,\"journal\":{\"name\":\"African Review of Physics\",\"volume\":\"12 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"African Review of Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15407/spqeo12.04.421\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Physics and Astronomy\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"African Review of Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo12.04.421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Physics and Astronomy","Score":null,"Total":0}
0 ≤ ≤ x have been grown by a direct vapour transport techn ique (DVT) in the laboratory. The structural characterizations of these crystals are made by XRD method. The particle size for a nu mber of reflections has been calculated using the Scherrer’s formula. A con siderable variation is shown in the deformation ( α ) and growth ( β ) fault probabilities in In xMoSe 2 ( ) 1 0 ≤ ≤ x single crystal due to off-stoichiometry, which pos sesses the stacking fault in the single crystal.
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