{"title":"碲与cd衬底直接反应制备n-CdTe多晶光电极","authors":"A.M. Aushana, S.M. Aliwi","doi":"10.1016/0741-983X(90)90055-7","DOIUrl":null,"url":null,"abstract":"<div><p>In the present work we have produced polycrystalline n-CdTe film on Cd element as substrate by direct surface reaction between elemental Te and Cd surfaces, at elevated temperatures ranging between 180 and 275°C under argon atmosphere. The film is characterized by X-ray diffraction and reflectance spectroscopy. The <em>i</em>-<em>V</em> characteristics and photoelectrochemical behaviour of CdTe in polysulphide electrolyte are investigated. The effect of light intensity on both short circuit current (<em>i</em><sub>sc</sub>) and open circuit voltage (<em>V</em><sub>oc</sub>) of the cell: Cd/CdTe/polysulphide/Pt is also recorded.</p></div>","PeriodicalId":101171,"journal":{"name":"Solar & Wind Technology","volume":"7 5","pages":"Pages 511-514"},"PeriodicalIF":0.0000,"publicationDate":"1990-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0741-983X(90)90055-7","citationCount":"1","resultStr":"{\"title\":\"n-CdTe polycrystalline photoelectrode prepared by direct reaction of tellurium and Cd-substrate\",\"authors\":\"A.M. Aushana, S.M. Aliwi\",\"doi\":\"10.1016/0741-983X(90)90055-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In the present work we have produced polycrystalline n-CdTe film on Cd element as substrate by direct surface reaction between elemental Te and Cd surfaces, at elevated temperatures ranging between 180 and 275°C under argon atmosphere. The film is characterized by X-ray diffraction and reflectance spectroscopy. The <em>i</em>-<em>V</em> characteristics and photoelectrochemical behaviour of CdTe in polysulphide electrolyte are investigated. The effect of light intensity on both short circuit current (<em>i</em><sub>sc</sub>) and open circuit voltage (<em>V</em><sub>oc</sub>) of the cell: Cd/CdTe/polysulphide/Pt is also recorded.</p></div>\",\"PeriodicalId\":101171,\"journal\":{\"name\":\"Solar & Wind Technology\",\"volume\":\"7 5\",\"pages\":\"Pages 511-514\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0741-983X(90)90055-7\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solar & Wind Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0741983X90900557\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar & Wind Technology","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0741983X90900557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
n-CdTe polycrystalline photoelectrode prepared by direct reaction of tellurium and Cd-substrate
In the present work we have produced polycrystalline n-CdTe film on Cd element as substrate by direct surface reaction between elemental Te and Cd surfaces, at elevated temperatures ranging between 180 and 275°C under argon atmosphere. The film is characterized by X-ray diffraction and reflectance spectroscopy. The i-V characteristics and photoelectrochemical behaviour of CdTe in polysulphide electrolyte are investigated. The effect of light intensity on both short circuit current (isc) and open circuit voltage (Voc) of the cell: Cd/CdTe/polysulphide/Pt is also recorded.
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