InGaAsP/InP层绝对厚度测量双波长传输的优化与标定

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147427

B. Sartorius, M. Brandstattner

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引用次数: 0

摘要

描述了一种用于InGaAsP层厚度无损测绘的双波长透射方法的标定和优化。在双波长传输中，两束光束同时聚焦到相同的采样点:吸收光束的基片是透明的，只有被调查的层被吸收，参考光束没有吸收，但几乎相同的寄生损失。讨论了从已知厚度层的测量中推导InGaAsP层的吸收系数。文中还讨论了在平衡过程中使用无外延层的参考晶片优化的寄生损耗补偿。

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Optimization and calibration of two-wavelength transmission for absolute thickness measurements of InGaAsP/InP layers

The calibration and optimization of a two-wavelength transmission method for nondestructive thickness mapping of InGaAsP layers are described. In two-wavelength transmission, two beams are focused simultaneously to the same sample point: the absorption beam for which the substrate is transparent and only the layer under investigation is absorbing, and the reference beam that exhibits no absorption but nearly identical parasitic losses. The derivation of the absorption coefficient of the InGaAsP layers from measurements on layers with known thicknesses is discussed. The compensation of parasitic losses, optimized by using a reference wafer without an epitaxial layer during the balancing procedure, is also discussed.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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