硅基双栅隧穿场效应晶体管结构的严谨研究

{"title":"硅基双栅隧穿场效应晶体管结构的严谨研究","authors":"N. Guenifi, Dr. Shiromani Balmukund Rahi, T. Ghodbane","doi":"10.1166/MAT.2018.1600","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":18271,"journal":{"name":"Materials Focus","volume":"139 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Rigorous Study of Double Gate Tunneling Field Effect Transistor Structure Based on Silicon\",\"authors\":\"N. Guenifi, Dr. Shiromani Balmukund Rahi, T. Ghodbane\",\"doi\":\"10.1166/MAT.2018.1600\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":18271,\"journal\":{\"name\":\"Materials Focus\",\"volume\":\"139 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Focus\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1166/MAT.2018.1600\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Focus","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1166/MAT.2018.1600","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}