化学气相沉积法中气相生成纳米颗粒两步沉积氧化硅膜

J. Suk, Sungwook Hong, G. Jang, N. Hwang
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引用次数: 1

摘要

非经典结晶在化学气相沉积(CVD)中得到了广泛的研究,其中带电纳米颗粒(NPs)是薄膜生长的基石。本文在CVD工艺中研究了两步生长过程中氧化硅膜的沉积行为,即NPs在高温下气相生成,在低温下沉积成膜。虽然我们提供了SiH4, H2和N2,但沉积的膜是氧化硅,这是由于真空度相对较差。在不同条件下,在透射电子显微镜(TEM)下,在铜栅格碳膜上捕获氧化硅NPs 10 s。在锥形喷嘴石英管中,随着加工时间(或延迟时间)的增加,纳米颗粒的尺寸急剧增加,并沉积表面粗糙的多孔膜。然而,当使用不带喷嘴的石英管时,随着加工时间的增加,尺寸并没有增加太多,并且沉积了致密的表面光滑的薄膜。这些结果表明,纳米颗粒的尺寸是低温下两步生长致密薄膜沉积的重要参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Two-Step Deposition of Silicon Oxide Films Using the Gas Phase Generation of Nanoparticles in the Chemical Vapor Deposition Process
Non-classical crystallization, in which charged nanoparticles (NPs) are the building blocks of film growth, has been extensively studied in chemical vapor deposition (CVD). Here, the deposition behavior of silicon oxide films by the two-step growth process, where NPs are generated in the gas phase at high temperature and deposited as films at low temperature, was studied in the CVD process. Although we supplied SiH4, H2, and N2, the deposited film turned out to be silicon oxide, which is attributed to relatively poor vacuum. Also, silicon oxide NPs were captured on transmission electron microscopy (TEM) carbon membranes of a copper grid for 10 s under various conditions. When the quartz tube with a conical nozzle was used, the size of nanoparticles increased drastically with increasing processing time (or delay time) and porous films with a rough surface were deposited. When the quartz tube without a nozzle was used, however, the size did not increase much with increasing processing time and dense films with a smooth surface were deposited. These results suggest that the size of nanoparticles is an important parameter for the deposition of dense films for two-step growth at low temperatures.
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