基于电容共节点推推输出提取的12 ghz GaInP/GaAs HBT压控振荡器

Jongsik Kim, S. Jeon, S. Moon, Nam-Young Kim, Hyunchol Shin
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引用次数: 10

摘要

一种新的推-推式压控振荡器结构从负g/sub - m/振荡器拓扑中的容性共节点获取二次谐波输出信号。二次谐波的产生是由发射基极结二极管的非线性电流电压特性引起的;1)明显的电压削波,2)在核心晶体管的开关操作过程中上升和下降时间不同。在GaInP/GaAs HBT中实现的12 ghz MMIC VCO原型在1 MHz偏置时输出功率为-5 dBm,相位噪声为-108 dBc/Hz,而从2.4 v电源获取10.7 mA,相当于VCO的-175.8 dBc/Hz的品质系数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 12-GHz GaInP/GaAs HBT VCO based on push-push output extraction from capacitive common-node
A new push-push VCO architecture takes the second harmonic output signal from a capacitive common-node in a negative-g/sub m/ oscillator topology. The generation of the 2nd harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. A prototype 12-GHz MMIC VCO realized in GaInP/GaAs HBT achieves an output power of -5 dBm, a phase noise of -108 dBc/Hz at 1 MHz offset while drawing 10.7 mA from a 2.4-V supply, which is equivalent to -175.8 dBc/Hz of VCO figure-of-merit.
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