亚if纳米先进FinFET设计,适用于不同的Vdd和温度工作范围

Soyoun Kim, S.K. Kim, J. kim, B.H. Choi, B. Park, Y. Yasuda-Masuoka, S. Kwon
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引用次数: 0

摘要

一种先进的FinFET设计被确定,以提高变化和最小工作电压$(V_{\text{min}})$在不同的温度和电源电压$(V_{\text{dd}})$范围内,使用低于10 nm的FinFET晶体管。通过澄清每个电参数对变化和工作电压的影响,成功地证明了合适的FinFET设计可以在各种$V_{\text{dd}}$范围内将$I_{\text{eff}}$变化减少0.4x,将$I_{\text{dd}}$变化减少0.8x。本文还提供了tr设计,使$V_{\text{min}}$提高35 mV,开关能量降低0.87倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sub-If nm Advanced FinFET Design for Different Applications in Various Vdd and Temperature Operation Ranges
An advanced FinFET design is identified to improve both variation and minimum operation voltage $(V_{\text{min}})$ in various temperature and supply voltage $(V_{\text{dd}})$ ranges, using sub-10 nm FinFET transistors. Through a clarification of each electrical parameter's impact on both variation and operation voltage, a suitable FinFET design is successfully demonstrated to reduce $I_{\text{eff}}$ variation by 0.4x, as well as Idoff variation by 0.8x in various $V_{\text{dd}}$ ranges. This paper also provides Tr. design to improve $V_{\text{min}}$ by 35 mV with the switching energy 0.87x reduction.
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