一种用于热敏电阻的新型过渡金属氧化物传感器材料:氧化锰钒

2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1) Pub Date : 2012-03-07 DOI:10.1109/ISPTS.2012.6260898

Girish M. Gouda, C. L. Nagendra

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引用次数: 4

摘要

制备了块体和薄膜形式的锰钒氧化物热敏电阻材料并对其进行了表征。采用陶瓷带浇铸和固态烧结制备的大块材料本质上是结晶的，而薄膜即使经过沉积后高温退火也仍是无定形的。电学性质的研究清楚地表明，这些材料的电阻率具有典型的负温度系数(NTC)，这是由于极化子跳变小。薄膜样品具有直接的光学带隙，在红外区表现出增加的吸收。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new transition metal oxide sensor material for thermistor applications: Manganese-vanadium-oxide

Manganese vanadium oxide thermistor materials both in bulk and thin film form have been prepared and characterized. The bulk materials synthesized by ceramic tape casting and solid state sintering are crystalline in nature while thin films are amorphous even after post deposition annealing at high temperature. The electrical properties' study clearly shows that these materials follow a typical characteristic of negative temperature coefficient (NTC) of resistivity which is attributed to small polaron hopping. The thin film samples have direct optical band gap and shows increased absorption in the infrared region.

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2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)

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