铜含量对CIGS介电函数影响的原位研究

S. Marsillac, V. Ranjan, S. Little, R. Collins
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引用次数: 3

摘要

采用两段或三段共蒸发工艺制备了高效CuIn1-xGaxSe2 (CIGS)薄膜太阳能电池。这两种方法都涉及富铜到贫铜的转变。控制富cu到贫cu转变的一种方法是所谓的终点检测(EPD),它监测薄膜从富cu到贫cu转变时发射率的变化。然而,这种方法取决于衬底的热响应和相应热电偶的位置,这可能导致观察相变的延迟。这里提出了一种新颖的,非破坏性的方法来检测从富铜到贫铜或反之亦然的这种相变的存在。在这项研究中,我们依靠高灵敏度的实时光谱椭偏仪(RTSE),通过提取整个沉积过程中的介电函数,同时测量吸收层的多种结构和电子特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
In-situ study of CIGS dielectric function as a function of copper content
High efficiency CuIn1-xGaxSe2 (CIGS) thin film solar cells are produced by two-stage or three-stage co-evaporation processes. Both of these methods involve a Cu-rich to Cu-poor transition. One way to control the Cu-rich to Cu-poor transition is the so-called end point detection (EPD), which monitors the change of emissivity of the film as it changes from Cu-rich to Cu-poor. This method, however, depends on the thermal response of the substrate and the location of the corresponding thermocouple, which can lead to delays in observing the phase transitions. Presented here is a novel, nondestructive way to detect the presence of such phase changes from Cu-rich to Cu-poor or vice-versa. In this study we have relied on the high sensitivity of real time spectroscopic ellipsometry (RTSE) to simultaneously measure multiple structural and electronic properties of the absorber layer by extracting dielectric functions throughout the deposition.
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