Mn掺杂(Ba, Sr)TiO3薄膜变容管在低温下的可调性能

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI:10.1109/IMWS-AMP.2015.7324956

Fengjin Xia, Xu Wang, Jia Wang, Yun Wu, Y. Bian, Chunguang Li, Xueqiang Zhang, Guoqiang Li, D. Bai, Hong Li, Liang Sun, M. Sun, Yusheng He

{"title":"Mn掺杂(Ba, Sr)TiO3薄膜变容管在低温下的可调性能","authors":"Fengjin Xia, Xu Wang, Jia Wang, Yun Wu, Y. Bian, Chunguang Li, Xueqiang Zhang, Guoqiang Li, D. Bai, Hong Li, Liang Sun, M. Sun, Yusheng He","doi":"10.1109/IMWS-AMP.2015.7324956","DOIUrl":null,"url":null,"abstract":"Mn doped ferroelectric (Ba, Sr)TiO3 (Ba0.05Sr0.95Ti0.95Mn0.05O3, BSTM) thin films were prepared on the MgO single crystal substrate by using pulsed laser deposition technique. The dielectric properties of the varactor composed by this thin film was investigated by using a superconductor resonator at the liquid nitrogen temperature. Measurement results indicated that the thin film showed high quality-factor of up to 140, with a tunability of 72% at the bias voltage of 210 V. The loss tangent of the varactor varied from 0.02 to 0.008 with the bias changed from 0 V to 210 V. Both the low dielectric loss and tunable properties of the BSTM thin film varactor are useful for tunable microwave applications.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"34 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The tunable properties of Mn doped (Ba, Sr)TiO3 thin film varactor at low temperature\",\"authors\":\"Fengjin Xia, Xu Wang, Jia Wang, Yun Wu, Y. Bian, Chunguang Li, Xueqiang Zhang, Guoqiang Li, D. Bai, Hong Li, Liang Sun, M. Sun, Yusheng He\",\"doi\":\"10.1109/IMWS-AMP.2015.7324956\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Mn doped ferroelectric (Ba, Sr)TiO3 (Ba0.05Sr0.95Ti0.95Mn0.05O3, BSTM) thin films were prepared on the MgO single crystal substrate by using pulsed laser deposition technique. The dielectric properties of the varactor composed by this thin film was investigated by using a superconductor resonator at the liquid nitrogen temperature. Measurement results indicated that the thin film showed high quality-factor of up to 140, with a tunability of 72% at the bias voltage of 210 V. The loss tangent of the varactor varied from 0.02 to 0.008 with the bias changed from 0 V to 210 V. Both the low dielectric loss and tunable properties of the BSTM thin film varactor are useful for tunable microwave applications.\",\"PeriodicalId\":6625,\"journal\":{\"name\":\"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"volume\":\"34 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMWS-AMP.2015.7324956\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP.2015.7324956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用脉冲激光沉积技术在MgO单晶衬底上制备了Mn掺杂铁电(Ba, Sr)TiO3 (Ba0.05Sr0.95Ti0.95Mn0.05O3, BSTM)薄膜。利用超导体谐振器在液氮温度下研究了由该薄膜组成的变容管的介电性能。测试结果表明，该薄膜在210 V偏置电压下的质量因数高达140，可调性达72%。当偏置从0 V变化到210 V时，变容管的损耗正切值在0.02 ~ 0.008之间变化。BSTM薄膜变电容的低介电损耗和可调谐特性对可调谐微波应用非常有用。

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The tunable properties of Mn doped (Ba, Sr)TiO3 thin film varactor at low temperature

Mn doped ferroelectric (Ba, Sr)TiO3 (Ba0.05Sr0.95Ti0.95Mn0.05O3, BSTM) thin films were prepared on the MgO single crystal substrate by using pulsed laser deposition technique. The dielectric properties of the varactor composed by this thin film was investigated by using a superconductor resonator at the liquid nitrogen temperature. Measurement results indicated that the thin film showed high quality-factor of up to 140, with a tunability of 72% at the bias voltage of 210 V. The loss tangent of the varactor varied from 0.02 to 0.008 with the bias changed from 0 V to 210 V. Both the low dielectric loss and tunable properties of the BSTM thin film varactor are useful for tunable microwave applications.

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来源期刊

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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